PART |
Description |
Maker |
APT40M70JVFR |
53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: ISOTOP®; ID (A): 53; RDS(on) (Ohms): 0.07; BVDSS (V): 400; POWER MOS V FREDFET
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MICROSEMI POWER PRODUCTS GROUP ADPOW[Advanced Power Technology]
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APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN 22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN 1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET 31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000; 53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp. MICROSEMI CORP
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APT4F120K |
N-Channel FREDFET 1200V, 4A, 4.60Ω Max,
|
Microsemi Corporation
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BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd 20 V, 1 A PNP medium power transistor
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NXP Semiconductors
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APT4020BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 23; RDS(on) (Ohms): 0.2; BVDSS (V): 400; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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Microsemi, Corp.
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5KP10 5KP100 5KP10A 5KP100A 5KP36 5KP8.5A 5KP30 5K |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:50-110V PEAK PULSE POWER: 5000W TRANSZORBTRANSIENT VOLTAGE SUPPRESSOR TRANSZORB⑩瞬态电压抑制器 IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: RC Soft Switching Series 8-60 kHz; Package: TO-247; VCE (max): 1,000.0 V; IC(max) @ 25°: 60.0 A; IC(max) @ 100°: 30.0 A TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR
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Shanghai Sunrise Electronics GE Security, Inc. General Semiconductor
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UPD23C64040ALGY-XXX-MK UPD23C64040ALGY-XXX-MJ |
HiRel Silicon Diodes; Package: --; Package: -; IF (max): -; VBR (min): -; rF (typ): -; CT (max): - x8 or x16 ROM (Mask Programmable) x8或x16光盘(掩模可编程
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NEC, Corp.
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TIP812-DOC-20 TIP812-TM-21 TIP812 TIP812-10 TIP812 |
SERCOS Controller SERCOS总线控制 RES 680 OHM 1% 3W SILICONE WW SERCOS总线控制 N-Channel MOSFETs (>500V
900V); Package: PG-TO262-3; VDS (max): 500.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 190.0 mOhm; ID(max) @ TC=25°C: 21.0 A; IDpuls (max): 63.0 A;
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Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
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IR3101 |
BRUSH DC MOTOR CONTROLLER, 1.6 A, PSIP9 Intelligent Power Module. Gate Driver IC integrated with a half bridge FredFET Designed for sub 250W Motor Drive applications in a 9-Lead SIP. RDSon of 1.0 Ohm Intelligent Power Module.Gate Driver IC integrated with a half bridge FredFET Designed for sub 250 Half-Bridge FredFet and Integrated Driver RESISTOR 5.6 OHM 35W TO220
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IRF[International Rectifier]
|
19MT050XF |
500V Single N-Channel HEXFET Power MOSFET in a MTP package FULL BRIDGE FREDFET MTP HEXFET POWER MOSFET From old datasheet system
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IRF[International Rectifier]
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APT38F80B209 APT38F80L |
N-Channel FREDFET 41 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA N-Channel FREDFET 41 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB N-Channel FREDFET
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Microsemi Corporation Microsemi, Corp.
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